Title: Paramagnetic NO2 centers in thin gamma-irradiated HfO2 layers on (100)Si revealed by electron spin resonance
Authors: Stesmans, Andre
Afanas'ev, Valeri
Chen, F
Campbell, SA #
Issue Date: May-2004
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:84 issue:22 pages:4574-4576
Abstract: Electron spin resonance (ESR) analysis reveals the incorporation of N in (100)Si/HfO2 structures with ultrathin amorphous HfO2 films deposited by chemical vapor deposition (CVD) using Hf(NO3)(4) as precursor, through detection, after Co-60 gamma-irradiation, of NO2 radicals (density greater than or similar to55 at. ppm). The molecules are found to be stabilized and likely homogeneously distributed in the HfO2 network. Some network forming N entity is suggested as a precursor, transformed into ESR-active NO2 upon gamma-irradiation. The interesting N incorporation aspect appears inherent to the particular CVD process. (C) 2004 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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