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Title: Electron spin resonance features of the P-b1 interface defect in thermal (100)Si/SiO2
Authors: Stesmans, AndrĂ© ×
Afanas'ev, Valeri #
Issue Date: 1997
Publisher: Trans Tech Publications
Series Title: Materials Science Forum vol:258-2 pages:1713-1718
Abstract: K-band electron spin resonance (ESR) study of high-temperature processed thermal (100)Si/SiO2 structures exhibiting predominantly the P-b1 Signal has allowed improved ESR characterisation of this defect. The results affirm the P-b1 point symmetry as monoclinic-I, the g matrix being characterized by the principal values g(1)=2.0058, g(2)=2.00735, and g(3)=2.0022 +/- 0.0001, where the g(2) direction is at an angle of 3 +/- 1 degrees (towards the interface) with a [111] direction at 35.3 degrees with the interface plane. The presence of a field angle dependent broadening in the linewidth is unveiled, ascribed to a strain induced spread sigma(g perpendicular to), about 2-3 times less than typical for Pb in (111)Si/SiO2. The significance of these results in combination with previously attained salient experimental facts is addressed as to the atomic nature of P-b1.
URI: 
ISSN: 0255-5476
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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