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Title: Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells
Authors: Mols, Yves
Leys, M. R
Simons, E
Poortmans, J
Borghs, Gustaaf #
Issue Date: Jan-2007
Publisher: Elsevier science bv
Series Title: Journal of Crystal Growth vol:298 pages:758-761
Abstract: Intrinsically carbon-doped AlGaAs layers were grown on semi-insulating (001) GaAs (on axis) and Ge (6 degrees misoriented) substrates using tertiarybutylarsine (TBAs). Growth temperatures from 512 to 630 degrees C were studied and V/III ratios were varied in the range from 9.3 to 0.8. Carrier concentrations saturate at a value of 6 x 10(19) cm(-3).
ISSN: 0022-0248
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
# (joint) last author

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