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Title: Cyclotron resonance of 2D electrons at Si-d-doped InSb layers grown on GaAs
Authors: Vanbockstal, L
Mahy, M
Dekeyser, A
Hoeks, W
Herlach, Fritz
Peeters, Fm
Vandegraaf, W
Borghs, Gustaaf #
Issue Date: May-1995
Publisher: Elsevier science bv
Series Title: Physica b vol:211 issue:1-4 pages:466-469
Abstract: Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level.
Description: Physica B, vol. 211, pp. 466-469, 1995, Elsevier Science B.V., Amsterdam, The Netherlands
ISSN: 0921-4526
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
# (joint) last author

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