Journal of Applied Physics vol:81 issue:5 pages:2148-2152
The size distribution of Pb inclusions formed by high-dose ion implantation in crystalline Si has been studied with a variety of experimental techniques. Results obtained from small angle x-ray scattering, transmission electron microscopy, and low-temperature magnetic moment measurements are compared. For samples implanted at room temperature, the results depend on which technique has been used, due to the amorphization of the silicon. The experiments on the samples implanted at an elevated temperature yield compatible results. (C) 1997 American Institute of Physics.