Physica Status Solidi B - Basic Research vol:241 issue:7 pages:1470-1476
Successful spin-injection from magnetic contacts into a semiconductor heterostructure (up to room temperature) is seen as one of the key features to realise spintronic applications. In this paper we describe our effort in establishing spin-injection in the tunneling regime from various different ferromagnetic contacts. The device structure that is used to test the spin-injection is a III-V light emitting device. This device has good characteristics as a detector of the injected electron spin-polarisation. We summarise the results on spin-injection obtained from different magnetic contact strategies: ferromagnetic metal/A1O(x), ferromagnetic metal/Schottky tunnel barrier and ferromagnetic semiconductor/Zener diode combination. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.