Title: Different strain relaxation mechanisms in strained Si/Si1-xGex/Si heterostructures by high dose B+ and BF2+ doping
Authors: Chen, CC ×
Lindgren, AC
Zhang, SL
Zhu, DZ
Vantomme, André #
Issue Date: Dec-2002
Publisher: Elsevier science bv
Series Title: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:198 issue:1-2 pages:57-63
Abstract: Strained Si/Si0.8Ge0.2/Si heterostructures are implanted at room temperature with 7.5 keV B+ and 33 keV BF2+ ions to a high dose of 2 x 10(15) ions/cm(2), respectively. The samples are subsequently subjected to three-step anneals (spacer anneal, oxidation anneal and rapid thermal anneal), which are used to simulate a real fabrication process of SiGe-based MOSFET devices. The damage induced by implantation and its recovery are characterized by 2 MeV He-4(+) RBS/ channeling spectrometry. A damage layer on the surface is induced by B+ implantation, but BF2+ ion implantation amorphizes the surface of Si/Si0.8Ge0.2/Si heterostructure. Channeling angular scans along the (110) axial direction demonstrate that the strain stored in the SiGe layer could be nearly completely retained for the B+ implantated and subsequently annealed sample. However, the strain in the BF2+ implanted/annealed SiGe layer has decreased drastically. (C) 2002 Elsevier Science B.V. All rights reserved.
ISSN: 0168-583X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science