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Title: Epitaxial ternary rexmo1-xsi2 thin-films on si(100)
Authors: Vantomme, AndrĂ© ×
Nicolet, Ma
Long, Rg
Mahan, Je #
Issue Date: Apr-1994
Publisher: American Institute of Physics
Series Title: Journal of Applied Physics vol:75 issue:8 pages:3924-3927
Abstract: Reactive deposition epitaxy was used to synthesize thin layers of RexMo1-xSi2 on Si(100). In the case of x = 1, ReS2 layers of excellent crystalline quality have been reported previously [J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys. Lett. 56, 2439 (1990)]. In the case of x=0, however, virtually no alignment of the MoSi2 and the substrate is found, although this silicide is nearly isomorphic to ReSi2. For intermediate values of x, highly epitaxial ternary silicides are obtained, at least for a Mo fraction up to 1/3.
URI: 
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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