Low temperature anneal of electron irradiation induced defects in p type silicon
Trauwaert, MA × Vanhellemont, J Maes, HE Van Bavel, AM Langouche, Guido Clauws, P #
Materials science and technology vol:14 issue:12 pages:1295-1298
Two dominant defect levels with activation energy E-v + 0.19 eV and E-v + 0.36 eV (C-s C-i or CiOi complex) are created in the lower part of the bandgap after low energy electron irradiation of boron doped float zone or Czochralski silicon. The E-v + 0.19 eV level is associated to the donor state of the divacancy (V-2(0/+)), since the annealing behaviour of this level in the temperature range between 250 and 400 degrees C is in good agreement with the behaviour reported for the divacancy in silicon. However, there still exists some controversy in the literature about the exact position of the donor level V-2(0/+) for which values are reported at around E-v + 0.20 eV or E-v + 0.24 eV. This paper also reports on the transformation of the E-v + 0.19 eV level appearing immediately after election irradiation in p type silicon to the E-v + 0.24 eV level after annealing at low temperatures for several days.