Title: Low temperature anneal of electron irradiation induced defects in p type silicon
Authors: Trauwaert, MA ×
Vanhellemont, J
Maes, HE
Van Bavel, AM
Langouche, Guido
Clauws, P #
Issue Date: Dec-1998
Publisher: Inst materials
Series Title: Materials science and technology vol:14 issue:12 pages:1295-1298
Abstract: Two dominant defect levels with activation energy E-v + 0.19 eV and E-v + 0.36 eV (C-s C-i or CiOi complex) are created in the lower part of the bandgap after low energy electron irradiation of boron doped float zone or Czochralski silicon. The E-v + 0.19 eV level is associated to the donor state of the divacancy (V-2(0/+)), since the annealing behaviour of this level in the temperature range between 250 and 400 degrees C is in good agreement with the behaviour reported for the divacancy in silicon. However, there still exists some controversy in the literature about the exact position of the donor level V-2(0/+) for which values are reported at around E-v + 0.20 eV or E-v + 0.24 eV. This paper also reports on the transformation of the E-v + 0.19 eV level appearing immediately after election irradiation in p type silicon to the E-v + 0.24 eV level after annealing at low temperatures for several days.
ISSN: 0267-0836
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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