IEEE Transactions on Magnetics vol:35 issue:5 pages:3094-3096
Electrodeposited spin-valves on GaAs substrates were patterned down into 80 mu m, 4 mu m and 2 mu m strips. A symmetric spin-valve configuration is used which incorporates an artificially hard substructure. Sensitivities up to 1.5%/Oe were observed, these being the highest ever observed in electrodeposited structures. Upon patterning an increased antiferromagnetic contribution of the inner hard substructure was seen.