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Title: Nuclear orientation of i-125 in n-si and p-si using defect-induced electric-field gradients
Authors: Bemelmans, Hilde ×
Berkes, I
Langouche, Guido #
Issue Date: 1993
Publisher: Baltzer sci publ bv
Series Title: Hyperfine Interactions vol:79 issue:1-4 pages:649-653
Abstract: Defect induced electric field gradients were generated by ion implantation of I-125 in highly B-doped p-Si and P-doped n-Si. The resulting low temperature nuclear orientation at the parent I-125 State was detected by Te-125 Mossbauer spectroscopy. From the asymmetry of the Mossbauer spectrum, the sign of the quadrupole interaction can be derived. This sign is found to be the same for n-Si as for p-Si.
ISSN: 0304-3843
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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