Title: Improvement of the transfer coefficient of GaAs/Si spin-valve transistors
Authors: Dessein, Kristof ×
Kumar, P.S. Anil
Lagae, Liesbet
De Boeck, J.
Delaey, Lucas
Borghs, Gustaaf #
Issue Date: May-2001
Publisher: North-Holland Pub. Co.
Series Title: Journal of Magnetism and Magnetic Materials vol:226-230 pages:2081-2083
Abstract: Nowadays GaAs/Si hot electron spin-valve transistors can be readily made using the vacuum bonding technique. They show sharp variations in collector current in small magnetic fields, good for sensor applications. However, the transfer coefficient of the device, defined as collected current over injected current, is only around 10(-4)%. We address the structural properties of GaAs/Si spin-valve transistors that influence the transfer coefficient. An improvement of the transfer coefficient of more than one order of magnitude is obtained by implementing a GaAs/AlAs emitter launcher maintaining 93% of relative collector current change. (C) 2001 Elsevier Science B.V. All rights reserved.
ISSN: 0304-8853
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physical Metallurgy and Materials Engineering Section (-)
Physics and Astronomy - miscellaneous
Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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