Title: Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance
Authors: Stesmans, Andre
Afanas'ev, Valeri #
Issue Date: Apr-2003
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:82 issue:17 pages:2835-2837
Abstract: Electron spin resonance (ESR) analysis reveals that the versatile noncontacting corona biasing method frequently applied in the electrical analysis of Si/SiO2-based structures is not a noninvasive tool, as usually assumed. In the absence of carrier impact damage, at least five types of ESR-active defects are generated, indicating the drastic impact and jeopardizing inference of intrinsic device properties. (C) 2003 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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