Title: Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors
Authors: Zimmermann, L
John, J
Degroote, S
Borghs, Gustaaf
Van Hoof, Chris
Nemeth, S #
Issue Date: Apr-2003
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:82 issue:17 pages:2838-2840
Abstract: We conducted an experimental study of back-side-illuminated InGaAs photodiodes grown on GaAs and sensitive in the short-wave infrared up to 2.4 mum. Standard metamorphic InGaAs or IR-transparent InAlAs buffers were grown by molecular-beam epitaxy. We studied dark current and photocurrent as a function of buffer thickness, buffer material, and temperature. A saturation of the dark current with buffer thickness was not observed. The maximum resistance area product was similar to10 Omega cm(2) at 295 K. The dark current above 200 K was dominated by generation-recombination current. A pronounced dependence of the photocurrent on the buffer thickness was observed. The peak external quantum efficiency was 46% (at 1.6 mum) without antireflective coating. (C) 2003 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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