Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:59 pages:680-684
Orientation and strain in buried CoSi2 layers have been studied in Si/CoSi2/Si(111) and Si/CoSi2/Si/CoSi2/Si(111) structures. Using a well defined implantation and annealing procedure, a unique combination of CoSi2 epitaxial layers was obtained having the same strain but a variable orientation. These novel structures are interesting for epitaxial growth studies and may have important device applications.