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Title: Orientation and strain of single and double cosi2 epitaxial layers formed by ion-implantation
Authors: Vantomme, André ×
Wu, Mf
Langouche, Guido
Maex, Karen
Vanderstraeten, Hélène
Bruynseraede, Yvan #
Issue Date: Jul-1991
Publisher: Elsevier science bv
Series Title: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:59 pages:680-684
Abstract: Orientation and strain in buried CoSi2 layers have been studied in Si/CoSi2/Si(111) and Si/CoSi2/Si/CoSi2/Si(111) structures. Using a well defined implantation and annealing procedure, a unique combination of CoSi2 epitaxial layers was obtained having the same strain but a variable orientation. These novel structures are interesting for epitaxial growth studies and may have important device applications.
URI: 
ISSN: 0168-583X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Solid State Physics and Magnetism Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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