Title: Resonant tunnelling light-emitting diodes
Authors: Van Hoof, Chris ×
Genoe, Jan
Borghs, Gustaaf #
Issue Date: Oct-1996
Publisher: Royal Society
Series Title: Philosophical Transactions of the Royal Society of London A, Mathematical, Physical and Engineering Sciences vol:354 issue:1717 pages:2447-2462
Abstract: Resonant tunnelling light-emitting diodes (RTLEDs) are p-i-n diodes containing a double-barrier (or multi-barrier) resonant tunnelling structure in the intrinsic region of the diode. The simultaneous intraband tunnelling of electrons and heavy holes gives rise to injection electroluminescence from the quantum well and from the two accumulation layers on either side of the resonant tunnelling structure. The fast transient phenomena in these structures give rise to a fast response of the optical output otherwise only found in semiconductor lasers. Important aspects of the bipolar diode like speed and charge dynamics will be discussed.
ISSN: 1364-503X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
× corresponding author
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science