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Title: Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks
Authors: Houssa, Michel
Afanas'ev, Valeri
Stesmans, Andre
Heyns, MM #
Issue Date: Nov-2001
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:79 issue:19 pages:3134-3136
Abstract: The generation of defects during the injection of charge carriers in metal-oxide-semiconductor capacitors with ultrathin SiON/ZrO2 gate stacks is investigated. A polarity dependence for the defect generation is revealed. It is shown that this polarity effect is inconsistent with the predictions of the anode-hole injection model, but can be explained by assuming the release of hydrogen close to the SiON/ZrO2 interface, followed by its transport and trapping in the gate dielectric, resulting in the generation of hydrogen-induced positive charge and bulk neutral traps. (C) 2001 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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