Title: Highly sensitive npnp optoelectronic switch by alas regrowth
Authors: Kuijk, M
Heremans, Paul
Borghs, Gustaaf #
Issue Date: Jul-1991
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:59 issue:5 pages:497-498
Abstract: A double-heterostructure NpnP optoelectronic switching device, with an extreme optical sensitivity and low holding power, has been fabricated. A decrease in breakover voltage of 650 mV is obtained at a light illumination of only 5 nW for a 50 x 50-mu-m2 device. To achieve this high sensitivity, the surface generation/recombination currents at the edges of the devices have been reduced by passivating the device perimeter with a regrowth of 50 nm AlAs (lowly p doped).
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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