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Title: Simultaneous synthesis of well-separated buried and surface silicides using a single-ion implantation step
Authors: Wu, Mf ×
Dewachter, J
Hendrickx, P
Vanbavel, Am
Pattyn, Hugo
Langouche, Guido
Vanhellemont, J
Bender, H
Maenhoudt, M
Bruynseraede, Yvan #
Issue Date: Jul-1993
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:63 issue:4 pages:542-544
Abstract: An unusual Ni distribution with two completely separated buried and surface silicide layers has been observed after Ni ion implantation in Si( 111) kept at a temperature of 300-degrees-C, with a dose of 1. 1 X 10(17)/CM2 and at a fixed energy of 90 keV. RBS/channeling, AES, and cross-sectional TEM have been used to study this phenomenon as a function of the substrate temperature and Co co-implantation. A model is presented, based on the diffusion of the transition metal, the defect annealing during the implantation, and the gettering power of the surface and the end of range defects.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Solid State Physics and Magnetism Section
× corresponding author
# (joint) last author

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