Title: A modeling and experimental method for accurate thermal analysis of AlGaN/GaN powerbars
Authors: Sodan, Vice ×
Stoffels, Steve
Oprins, Herman
Baelmans, Martine
Decoutere, Stefaan
De Wolf, Ingrid #
Issue Date: May-2015
Publisher: IEEE
Host Document: Proceedings of the 27th International Symposium on Power Semiconductor Devices & IC's pages:377-380
Conference: ISPSD, International Symposium on Power Semiconductor Devices & IC's location:Kowloon Shangri-La, Hong Kong date:10-14 May 2015
Abstract: In this work we present a novel and comprehensive method for thermal characterization of GaN based transistors. By means of two coupled simulations (TCAD and FEM) a detailed insight into the device physics has been provided whereas an experimental method (low RF drain conductance measurement) is recognized as a simple and accurate method for a full transient analysis of the transistors. The method (modeling and experiments) has been performed on several different GaN based transistors where a good agreement between the simulations and experiments is obtained.
ISBN: 978-1-4799-6261-7
Publication status: published
KU Leuven publication type: IC
Appears in Collections:Structural Composites and Alloys, Integrity and Nondestructive Testing
Applied Mechanics and Energy Conversion Section
× corresponding author
# (joint) last author

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