Proceedings of the 27th International Symposium on Power Semiconductor Devices & IC's pages:377-380
ISPSD, International Symposium on Power Semiconductor Devices & IC's location:Kowloon Shangri-La, Hong Kong date:10-14 May 2015
In this work we present a novel and comprehensive method for thermal characterization of GaN based transistors. By means of two coupled simulations (TCAD and FEM) a detailed insight into the device physics has been provided whereas an experimental method (low RF drain conductance measurement) is recognized as a simple and accurate method for a full transient analysis of the transistors. The method (modeling and experiments) has been performed on several different GaN based transistors where a good agreement between the simulations and experiments is obtained.