Title: Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing
Authors: Hurley, PK
Stesmans, Andre
Afanas'ev, Valeri
O'Sullivan, BJ
O'Callaghan, E #
Issue Date: Apr-2003
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:93 issue:7 pages:3971-3973
Abstract: In this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 degreesC is presented. From a combined analysis using electron spin resonance and quasistatic capacitance-voltage characterization, the dominant defects observed at the Si(111)/SiO2 interface following an inert ambient RTA process are identified unequivocally as the P-b signal (interfacial Si-3=Si-.) for the oxidized Si(111) orientation. Furthermore, the P-b density inferred from electron spin resonance (7.8+/-1)x10(12) cm(-2), is in good agreement with the electrically active interface state density (6.7+/-1.7)x10(12) cm(-2) determined from analysis of the quasistatic capacitance-voltage response. (C) 2003 American Institute of Physics.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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