Title: Pnp resonant tunneling light-emitting transistor
Authors: Genoe, Jan
Van Hoof, Chris
Fobelets, K
Mertens, R
Borghs, Gustaaf #
Issue Date: Aug-1992
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:61 issue:9 pages:1051-1053
Abstract: A pnp bipolar resonant tunneling transistor is realized using a base consisting of an n-type modulation doped quantum-well layer next to a double-barrier tunneling structure. Electrons are injected from the quantum-well base layer into the tunneling structure, leading to quantum-well light emission when they recombine with holes from the emitter. This optical output, which is modulated by the base voltage, persists in the negative differential resistance region of the current-voltage characteristics where the hole current is in oscillation. This opens possibilities for using this transistor as a high frequency electro-optical heterodyne convertor.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
Electrical Engineering (ESAT) TC, Technology Campus Diepenbeek
Technologiecluster ESAT Elektrotechnische Engineering
# (joint) last author

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