Channeled implantation of 80 keV Er ions into Si(111) has been investigated as a function of the angle between the ion beam and the <111> normal axis. The angular dependence of both the projected range and the crystalline quality of the resulting silicide shows excellent agreement with theoretical predictions and simulations. Simulations indicate that the critical angle for channeling is largely independent of substrate temperature. The postimplantation strain in the silicide layer is determined by irradiation-induced damage and therefore increases with the angle between the crystalline axis and the ion beam direction. (C) 2002 American Institute of Physics.