Title: Thermally induced Si(100)/SiO2 interface degradation in poly-Si/SiO2/Si structures
Authors: Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: May-2001
Publisher: Electrochemical soc inc
Series Title: Journal of the electrochemical society vol:148 issue:5 pages:G279-G282
Abstract: Thermal treatment of poly-Si/SiO2/Si(100) structures at temperatures above 850 degreesC is found to generate Si(100)/SiO2 interface states related to P-b0 centers, which are not generated in the samples subjected to annealing without the poly-Si layer on. Generation of P-b0 centers indicates that during the anneal hydrogen is released from the poly-Si/oxide stack. This H release may be related to the growth of poly-Si grains and/or to the chemical interaction between the poly-Si and SiO2. (C) 2001 The Electrochemical Society.
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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