Japanese journal of applied physics part 1-regular papers short notes & review papers vol:36 issue:6A pages:3426-3428
AlAS(0.16)Sb(0.84) ternaries and AlAs0.16Sb0.84/InAs superlattices have been grown by molecular beam epitaxy lattice-matched on InAs substrates. The compositional dependence of AlAsySb1-y on the ratio of Sb-4 to As-2 fluxes as well as on the substrate temperature has been investigated and can be explained qualitatively. The growth of AlAs0.16Sb0.84/InAs superlattices is described and illustrated by the results of reflection high-energy electron diffraction measurements. The crystalline quality of the superlattices is demonstrated by means of transmission electron microscopy and X-ray diffraction measurements.