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Title: Scanning tunneling spectroscopy of charge effects on semiconductor surfaces and atomic clusters
Authors: Maslova, NS
Oreshkin, SI
Panov, VI
Savinov, SV
Depuydt, A
Van Haesendonck, Christian #
Issue Date: Jan-1998
Publisher: Amer inst physics
Series Title: Jetp letters vol:67 issue:2 pages:146-152
Abstract: We have used scanning tunneling microscopy and scanning tunneling spectroscopy at liquid helium temperature to study the electronic structure of in situ cleaved, (110) oriented surfaces of InAs single crystals. Both unperturbed, atomically flat areas and areas with an atomic-size defect cluster have been investigated. We show that the anomalous behavior of the local tunneling conductivity, which indicates a pronounced enhancement of the semiconductor band gap for the flat areas, is consistent with band bending induced by charges localized at the apex of the tip. Atomic-size defect clusters contain additional charges which modify the band bending; this explains the different behavior of the tunneling conductivity near the defect cluster. The experimentally observed oscillations of the tunneling conductivity near the band gap edges can be directly related to resonant tunneling through quantized surface states which appear because of the band bending. (C) 1998 American Institute of Physics.
ISSN: 0021-3640
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
# (joint) last author

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