Title: Statistical model for prebreakdown current jumps and breakdown caused by single traps in magnetic tunnel junctions
Authors: Das, J
Degraeve, R
Groeseneken, Guido
Stein, S
Kohlstedt, H
Borghs, Gustaaf
De Boeck, J #
Issue Date: Aug-2003
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:94 issue:4 pages:2749-2751
Abstract: To obtain reliable magnetic tunnel junctions (MTJs) for sensor and memory applications, the quality of the Al2O3 tunnel barrier is extremely important. Here, we studied the reliability of MTJs with a 1.6 nm Al2O3 tunnel barrier formed by ultraviolet light assisted oxidation. In the stress measurements, prebreakdown current jumps and, finally, breakdown are observed. We show, by using statistics, that both the current jumps and the final breakdown can be attributed to single trap generation. Moreover, we can relate the current jump height to the trap location. In this way, we reveal the breakdown mechanism in MTJs and illustrate the importance of reliability studies. (C) 2003 American Institute of Physics.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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