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Title: Thin film growth of semiconducting Mg2Si by codeposition
Authors: Vantomme, AndrĂ© ×
Mahan, JE
Langouche, Guido
Becker, JP
Van Bael, Margriet
Temst, Kristiaan
Van Haesendonck, Christian #
Issue Date: Mar-1997
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:70 issue:9 pages:1086-1088
Abstract: Ultrahigh vacuum evaporation of magnesium onto a hot silicon substrate (greater than or equal to 200 degrees C), with the intention of forming a Mg2Si thin film by reaction, does not result in any accumulation of magnesium or its silicide. On the other hand, codeposition of magnesium with silicon at 200 degrees C, using a magnesium-rich flux ratio, gives a stoichiometric Mg2Si film which can be grown several hundreds of nm thick. The number of magnesium atoms which condense is equal to twice the number of silicon atoms which were deposited; all the silicon condenses while the excess magnesium in the flux desorbs. The Mg2Si layers thus obtained are polycrystalline with a (111) texture. From the surface roughness analysis, a self-affine growth mode with a roughness exponent equal to 1 is deduced. (C) 1997 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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