Title: Photoluminescence investigation of the tunnelling dynamics of holes and electrons in a p-type AlAs/GaAs resonant tunnelling structure
Authors: Kass, H
Schuddinck, W
Goovaerts, E
Van Hoof, Chris
Borghs, Gustaaf #
Issue Date: Aug-1998
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:43-4 pages:355-361
Abstract: Time resolved photoluminescence (PL) experiments on a p-type double-barrier AlAs/GaAs resonant tunnelling structure revealed an unexpectedly long PL decay at a bias voltage below the first resonance in the current voltage characteristics. It can be explained by the occurrence of inefficient nonresonant tunnelling of electrons from confined states in the hole depletion layer into the quantum well. The model calculation used in this interpretation could be cross-checked with the observation of two PL-transitions from cross-barrier recombination of electrons (holes) in the lowest levels inside the quantum well with holes (electrons) in the respective GaAs layers adjacent to the RTS. (C) 1998 Elsevier Science B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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