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Title: Metal-insulator transition in Mott-Hubbard system FeSi
Authors: Sluchanko, N
Glushkov, V
Demishev, S
Semeno, A
Weckhuysen, L
Moshchalkov, Victor
Menovsky, A #
Issue Date: Feb-2003
Publisher: Acta physica polonica b, jagellonian univ, inst physics
Series Title: Acta physica polonica b vol:34 issue:2 pages:787-790
Abstract: Following to the comprehensive study of a steady magnetic field dc-and ac-transport and magnetization in the almost magnetic narrow-gap semiconductor FeSi the galvanomagnetic measurements have been carried out in pulsed magnetic fields up to 50T. It was shown from the analysis of the experimental data obtained on high quality single crystals of iron monosilicide that the Mott-Hubbard scenario of metal-insulator transition with on-site Coulomb interaction Uapproximate toD (D-is the band half-width) provides the most adequate description of the low temperature anomalies in this model system. From this point of view the pulsed field magnetoresistance and Hall coefficient anomalies may be also interpreted in terms of a MIT in a strong magnetic field.
ISSN: 0587-4254
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
# (joint) last author

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