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Title: Enhanced annealing effect in an oxygen atmosphere on Ga1-xMnxAs
Authors: Malfait, Mathieu ×
Vanacken, Johan
Moshchalkov, Victor
Van Roy, W
Borghs, Gustaaf #
Issue Date: Mar-2005
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:86 issue:13
Article number: 132501
Abstract: We report on in situ resistivity measurements on Ga1-xMnxAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the Ga1-xMnxAs is exposed to oxygen, which indicates that the passivation of Mn interstitials (Mn-I) at the free surface occurs through oxidation. The presence of oxygen can therefore be an important annealing condition for the optimization of Ga1-xMnxAs thin films, all the more since the oxidation appears to be limited to the sample surface. Annealing in an oxygen-free atmosphere leads to an increase in the resistivity indicating a second annealing mechanism besides the outdiffusion of Mn-I. According to our magnetization and Hall effect data, this mechanism reduces the amount of magnetically and electrically active Mn atoms. (C) 2005 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Solid State Physics and Magnetism Section
Physics and Astronomy - miscellaneous
× corresponding author
# (joint) last author

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