Title: Electrodeposited spin valves on n-type GaAs
Authors: Attenborough, K ×
Boeve, H
De Boeck, J
Borghs, Gustaaf
Celis, Jean-Pierre #
Issue Date: 12-Apr-1999
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:74 issue:15 pages:2206-2208
Abstract: Soft switching, spin-valve Co/Cu heterostructures have been electrodeposited onto n-type (100) GaAs. A symmetric spin-valve configuration is used which incorporates an artificially hard substructure. A magnetoresistance change of up to 5.4% is observed with sensitivities up to 0.55% per Oersted and a saturation field of 100 Oe, the highest sensitivity so far observed in electrodeposited structures. The magnetoresistance measurements show a double switching step which we conclude is due to the free layers having differing coercivities. The Co/GaAs interface induces an in-plane anisotropy in the films which is responsible for these remarkable spin-valve properties. (C) 1999 American Institute of Physics. [S0003-6951(99)00915-8].
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
Chemical and Extractive Metallurgy Section (-)
× corresponding author
# (joint) last author

Files in This Item:
File Status SizeFormat
303.pdf Published 334KbAdobe PDFView/Open Request a copy

These files are only available to some KU Leuven Association staff members


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science