Title: Improved thermal performance of AlGaN/GaN HEMTs by an optimized flip-chip design
Authors: Das, Jo ×
Oprins, Herman
Ji, Hangfeng
Sarua, Andrei
Ruythooren, Wouter
Derluyn, Joff
Kuball, Martin
Germain, Marianne
Borghs, Gustaaf #
Issue Date: Nov-2006
Publisher: IEEE-Inst Electrical Electronics Engineering INC
Series Title: IEEE Transactions on Electron Devices vol:53 issue:11 pages:2696-2702
Abstract: AlGaN/GaN high electron mobility transistors (HEMT) on sapphire substrates have been studied for their potential application in RF power applications; however, the low thermal conductivity of the sapphire substrate is a major drawback. Aiming at RF system-in-a-package, the authors propose a flip-chip-integration approach, where the generated heat is dissipated to an AIN carrier substrate. Different flip-chip-bump designs are compared, using thermal simulations, electrical measurements, micro-Raman spectroscopy, and infrared thermography. The authors show that a novel bump design, where bumps are placed directly onto both source and drain ohmic contacts, improves the thermal performance of the HEMT.
ISSN: 0018-9383
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Applied Mechanics and Energy Conversion Section
Physics and Astronomy - miscellaneous
× corresponding author
# (joint) last author

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