Title: P-type doping of GaN by Mg+ implantation
Authors: Yao, SD ×
Zhou, SQ
Yang, ZJ
Lu, YH
Sun, CC
Sun, C
Zhang, GY
Vantomme, André
Pipeleers, Bert
Zhao, Qiang #
Issue Date: Jan-2003
Publisher: Chinese physical soc
Series Title: Chinese physics letters vol:20 issue:1 pages:102-104
Abstract: Mg+ and Mg++P+ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channelling spectrometry before (chi(min) = 1.6%) and after implantation (chi(min) = 4.1%). X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.
ISSN: 0256-307X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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