Journal of Magnetism and Magnetic Materials vol:226 pages:933-935
Using an ultra-high vacuum deposition system equipped with an electron cyclotron resonance microwave plasma nitrogen source, epitaxial Fe-GaN-Fe layers were grown on GaAs for the evaluation of GaN as a spin-dependent tunneling barrier. The tunnel junction conductance was strongly temperature dependent. Above 10K thermionic emission over the barrier was the dominant transport mechanism, while at lower temperature direct tunneling prevailed. At 4 K, the I-V characteristics were non-linear as expected for metal-insulator-metal systems. To date present, spin-dependent tunneling was not observed. (C) . 2001 Elsevier Science B.V. All rights reserved.