Journal of Magnetism and Magnetic Materials vol:226 pages:939-941
For future implementation in high-density magnetic memory, magnetic tunnel junctions with small-resistance-area products are required. In this study, micron-scale, low-resistance. exchange-biased tunnel junctions were achieved by in-situ natural oxidation of thin At layers. The influence of the oxidation time on the junction properties is discussed. The resistance and magneto resistance, at low temperature and after anneal at elevated temperature, are interpreted by the competition between spin-dependent and spin-independent tunneling processes in the junction. (C) 2001 Elsevier Science B.V. All rights reserved.