ITEM METADATA RECORD
Title: Hydrogen-induced thermal interface degradation in (111) Si/SiO2 revealed by electron-spin resonance
Authors: Stesmans, Andre
Afanas'ev, Valeri #
Issue Date: May-1998
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:72 issue:18 pages:2271-2273
Abstract: Electron-spin resonance (ESR) experiments show that the interface degradation induced in thermal (111) Si/SiO2 by postoxidation annealing (POA) in vacuum-previously isolated by ESR as a permanent creation of P-b (degrees Si equivalent to Si-3) interface defects-is strongly enhanced (similar to 6 times) when performed in H-2 ambient. It, thus, appears that the H-2 POA step, standardly applied to passivate interface states (preexisting P(b)s) naturally introduced during oxidation, effectively creates additional defect entities; the process initiates from similar to 550 degrees C onward vis-a-vis similar to 640 degrees C for vacuum. The results unveil the atomic nature of one of the mechanisms of the electrically long-known ii-induced POA generation of adverse interface states. (C) 1998 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy

 




All items in Lirias are protected by copyright, with all rights reserved.

© Web of science