Title: Band alignments in metal-oxide-silicon structures with atomic-layer deposited Al2O3 and ZrO2
Authors: Afanas'ev, Valeri
Houssa, Michel
Stesmans, Andre
Heyns, MM #
Issue Date: Mar-2002
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:91 issue:5 pages:3079-3084
Abstract: The energy barrier height Phi for electrons at the interfaces of various metals (Mg,Al,Ni,Cu,Au) with nanometer-thin Al2O3 and ZrO2 layers grown on (100)Si by atomic layer deposition has been directly measured using internal photoemission of electrons into the insulator. The behavior of the metal/Al2O3 contacts with increasing metal electronegativity X-M resembles that of the metal/SiO2 interfaces with ideality factor dPhi/dX(M)approximate to1. The metal/ZrO2 contacts exhibit a less ideal behavior with dPhi/dX(M)approximate to0.75. The metal-silicon work function differences in structures with Al2O3 and ZrO2 insulators appear to be considerably larger than in the structures with thermally grown SiO2, suggesting the presence of a negative dipole layer at the metal/deposited oxide interface. (C) 2002 American Institute of Physics.
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science