Japanese journal of applied physics part 1-regular papers short notes & review papers vol:38 issue:3A pages:1310-1313
High-quality InAs/Al0.2Ga0.8Sb quantum well structures were grown on Germanium substrates by molecular beam epitaxy (MBE). Electron mobilities of 27,000 cm(2)/Vs for sheet concentrations of n(s) = 1.8 x 10(12) cm(-2) were routinely achieved at room temperature for undoped InAs/Al0.2Ca0.8Sb quantum well structures on Germanium substrates. We developed a simple processing technology for the fabrication of Corbino magnetoresistive devices. Excellent current sensitivities;bf 195 Ohm/T and voltage sensitivities of 2.35 T-1 at a magnetic field of 0.15 T were measured for Corbino shaped magnetoresistors on Germanium substrate at room temperature. This sensing performance is comparable to that obtained by identical sensors on GaAs substrate.