Title: Evidence for vacancy-interstitial pairs in Ib-type diamond
Authors: Iakoubovskii, Konstantin ×
Dannefaer, S
Stesmans, Andre #
Issue Date: Jun-2005
Publisher: Published by the American Physical Society through the American Institute of Physics
Series Title: Physical Review B, Condensed Matter and Materials Physics vol:71 issue:23 pages:233201-1-233201-4
Abstract: Diamonds containing nitrogen in different forms have been irradiated by 3-MeV electrons or Co-60 gamma photons and characterized by optical absorption (OA) and electron spin resonance (ESR). An unusually low production rate of vacancies (V) and interstitials (I) was observed in gamma-irradiated Ib-type diamonds (those containing isolated nitrogen) and pure IIa-type diamonds as compared to Ia diamonds (containing nitrogen clusters). Postirradiation annealing at temperatures above 300 degrees C strongly increased the V and I concentrations in Ib diamond, but not in IIa diamond. These results are explained as gamma irradiation of diamond predominantly produces V-I complexes instead of individual V and I defects. Strong effect of charge state on V-I recombination is revealed: In Ib diamond, V-I complexes are negatively charged and dissociate upon annealing. On the contrary, V-I pairs are neutral in IIa diamond, and they annihilate during irradiation. The OA, ESR, and positron annihilation signatures of the V--I pairs are identified.
ISSN: 2469-9950
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
× corresponding author
# (joint) last author

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