Materials science applications of ion beam techniques vol:248- pages:339-344
The transition-metal silicides were investigated in order to further knowledge on the formation of epi-and mesotaxial (buried) layers on/in Si and on SixGe1-x layers. The work was performed on synthesized CoxFe1-xSi2 with the extremes of pure CoSi2 and FeSi2. The results showed that the layers of silicides can be formed by ion implantation in stoichiometric composition. No epitaxial FeSi2 layer formed after implantation and annealing. The solubility of Fe in CoSi2 is very low and no single phase is formed in the broad concentration range of Co and Fe. Co dissolves in beta-FeSi2, populating two lattice sites.