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Title: Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing
Authors: Afanas'ev, Valeri
Stesmans, Andre #
Issue Date: Jan-1998
Publisher: Amer inst physics
Series Title: Applied Physics Letters vol:72 issue:1 pages:79-81
Abstract: Annealing of SiO2/(100)Si interfaces in hydrogen in the temperature range of 500-800 degrees C is found to introduce a considerable density of fixed positive charge. The charge is diamagnetic, and shows no correlation with any kind of dangling bond defects at the Si surface or in the oxide. The observed charged state is attributed to hydrogen bonding to a bridging oxygen atom at the interface (threefold coordinated oxygen center), which may account for the well-known oxidation-induced charge at the Si/SiO2 interfaces. (C) 1998 American Institute of Physics.
ISSN: 0003-6951
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Semiconductor Physics Section
# (joint) last author

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