Title: Damage and strain in pseudomorphic vs relaxed gexsi1-x layers on si(100) generated by si ion irradiation
Authors: Lie, Dyc ×
Vantomme, André
Eisen, F
Vreeland, T
Nicolet, Ma
Carns, Tk
Wang, Kl
Hollander, B #
Issue Date: Apr-1994
Publisher: Minerals, Metals & Materials Society and IEEE
Series Title: Journal of Electronic Materials vol:23 issue:4 pages:369-373
Abstract: We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed GexSi1-x films grown on Si(100) substrates. The ion range is such that the Si/GexSi1-x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed GexSi1-x layers of similar x for irradiation doses up to 2.5 x 10(14) Si/cm2 is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed.
ISSN: 0361-5235
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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