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Title: CoSi2 formation from CoxNi1-x/Ti system
Authors: Chamirian, Oxana ×
Lauwers, A
Demeurisse, C
Guerault, H
Vantomme, André
Maex, Karen #
Issue Date: Oct-2002
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:64 issue:1-4 pages:173-180
Abstract: The presence of Ni can significantly promote the CoSi-CoSi2 transformation process reducing the transformation temperature and, in consequence, the thermal budget of silicidation. In this work, silicidation of the Si/Co0.95Ni0.05/Ti system was investigated. Four point probe (4PP), Auger electron spectroscopy (AES), X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), and transmission electron microscopy (TEM) were used to characterise the silicide films. It was found that Co-Ni silicide can be formed at lower temperatures compared to the pure Co/Ti process, at the same time keeping important properties such as sheet resistance and roughness close to those of pure CoSi2. (C) 2002 Elsevier Science B.V. All rights reserved.
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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