The presence of Ni can significantly promote the CoSi-CoSi2 transformation process reducing the transformation temperature and, in consequence, the thermal budget of silicidation. In this work, silicidation of the Si/Co0.95Ni0.05/Ti system was investigated. Four point probe (4PP), Auger electron spectroscopy (AES), X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), and transmission electron microscopy (TEM) were used to characterise the silicide films. It was found that Co-Ni silicide can be formed at lower temperatures compared to the pure Co/Ti process, at the same time keeping important properties such as sheet resistance and roughness close to those of pure CoSi2. (C) 2002 Elsevier Science B.V. All rights reserved.