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Title: Growth and electrical characterization of GdSi1.7 epilayers formed by channeled ion beam synthesis
Authors: Hogg, SM ×
Vantomme, André
Wu, MF #
Issue Date: Mar-2002
Publisher: Amer inst physics
Series Title: Journal of Applied Physics vol:91 issue:6 pages:3664-3668
Abstract: Epitaxial GdSi1.7 layers have been produced by channeled ion beam synthesis. The crystalline quality improves with implant dose and substrate temperature. The latter determines the extent of dynamic annealing whereas both factors are instrumental in driving precipitate growth. This, in turn, promotes the formation of a continuous silicide layer following annealing. The information obtained in this study allows the production of high quality layers with a room temperature resistivity of 86 muOmega cm. Evidence of magnetic ordering is apparent below 44 K. (C) 2002 American Institute of Physics.
URI: 
ISSN: 0021-8979
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
× corresponding author
# (joint) last author

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