Title: Suppression of rare-earth implantation-induced damage in GaN
Authors: Vantomme, AndrĂ© ×
Hogg, SM
Wu, MF
Pipeleers, Bert
Swart, M
Goodman, S
Auret, D
Iakoubovskii, Konstantin
Adriaenssens, GJ
Jacobs, K
Moerman, I #
Issue Date: Apr-2001
Publisher: Elsevier science bv
Series Title: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:175-177 pages:148-153
Abstract: We have studied the damage induced by 80 keV Er implantation in epitaxial GaN/sapphire layers at room temperature and at 450 degreesC. The dopant distribution and lattice damage were investigated using Rutherford backscattering, channeling spectrometry and X-ray diffraction, whereas photoluminescence was used to probe the optical response. Random implantation results in substantial damage accumulation, which is difficult to recover during subsequent annealing. To reduce the ion-induced damage, we applied channeled implantation, i.e. directing the Er-beam along the nitride c-axis. Using this implantation geometry, a drastic decrease in the induced damage is observed. Channeled implantation generally results in green luminescence lines at room temperature, whereas no Er-related luminescence is observed after random implantation. (C) 2001 Elsevier Science B.V. All rights reserved.
ISSN: 0168-583X
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Semiconductor Physics Section
× corresponding author
# (joint) last author

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