Title: Structural defect recovery in gap after heavy-ion implantation
Authors: Jahn, Sg
Hofsass, H
Wahl, Ulrich
Winter, S
Recknagel, E
Issue Date: Jun-1991
Publisher: Elsevier science bv
Series Title: Applied surface science vol:50 issue:1-4 pages:169-172
Abstract: The channeling and blocking effect of electrons and positrons emitted in nuclear decay allows the lattice site location of radioactive impurities implanted into single crystals at small concentrations (ppm) and low implantation fluences (10(12)/cm2). We applied this emission channeling technique to the localization of In-112m and Cd-111m after implantation into si-GaP single crystals at different temperatures. After implantation at low temperature and subsequent annealing an increase of the fraction of substitutional probe atoms and a recovery of the local lattice structure between 300 and 500 K were observed. GaP tends to anneal at higher temperatures than GaAs (200-350 K), but compared to GaAs the channeling effects observed in GaP are more pronounced, indicating a more complete recovery of implantation defects.
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Non-KU Leuven Association publications

Files in This Item:

There are no files associated with this item.

Request a copy


All items in Lirias are protected by copyright, with all rights reserved.

© Web of science