Lattice site changes of ion-implanted li-8 in si studied by alpha-emission channeling
Wahl, Ulrich Hofsass, H Jahn, Sg Winter, S Hoffmann, H Recknagel, E
Elsevier science bv
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms vol:63 issue:1-2 pages:91-94
The emission channeling technique using position sensitive detection of alpha-particles was applied to locate the lattice sites of ion-implanted Li-8 in high-resistivity p-type Si. Below room temperature mainly tetrahedral and substitutional sites are occupied by the Li atoms. Above room temperature the diffusing Li is captured by defects probably containing oxygen or implantation-induced vacancies.