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Title: Enhancement of ALCVD (TM) TiN growth on Si-O-C and alpha-SiC : H films by O-2-based plasma treatments
Authors: Satta, Alessandra ×
Baklanov, M
Richard, O
Vantomme, André
Bender, H
Conard, T
Maex, Karen
Li, WM
Elers, KE
Haukka, S #
Issue Date: Jan-2002
Publisher: Elsevier science bv
Series Title: Microelectronic Engineering vol:60 issue:1-2 pages:59-69
Abstract: In advanced interconnection technologies, Atomic Layer Chemical Vapour Deposition (ALCVD(TM)) is a promising technique to deposit very conformal thin barriers on low-k dielectrics. To enhance the ALCVD growth, we have modified Si-O-C and alpha-SiC:H dielectric films by O-2-based plasma treatments. This paper discusses the effect of the plasma on the growth of ALCVD TiN and the modifications induced at the surface and in the bulk of the dielectrics. The O-2-based plasma enriches the dielectric surface with the OH group, improving the quality of the TiN films. Further optimisation of the surface treatments is needed to prevent undesired modification of the dielectric bulk. (C) 2002 Elsevier Science B.V. All rights reserved.
URI: 
ISSN: 0167-9317
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physics and Astronomy - miscellaneous
Nuclear and Radiation Physics Section
Associated Section of ESAT - INSYS, Integrated Systems
× corresponding author
# (joint) last author

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