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Keywords:

cosi2 layers, co implantation, silicides, growth, Science & Technology, Technology, Physical Sciences, Instruments & Instrumentation, Nuclear Science & Technology, Physics, Atomic, Molecular & Chemical, Physics, Nuclear, Physics, COSI2 LAYERS, CO IMPLANTATION, SILICIDES, GROWTH, 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics, 0402 Geochemistry, 0915 Interdisciplinary Engineering, Applied Physics, 5104 Condensed matter physics, 5106 Nuclear and plasma physics

Abstract:

In recent years, heteroepitaxial structures of CoSi2/Si and Si/CoSi2/Si have become an important topic of fundamental studies, as well as of novel device applications. The usual method for preparation of such structures is deposition of Co or CoSi2 with techniques such as molecular beam epitaxy (MBE). Ion beam synthesis (IBS) is another attractive method which has been developed recently. With this new technique, heteroepitaxial surface and buried CoSi2 layers with thicknesses from 160 to 1100 angstrom have been formed successfully, RBS, channeling, cross-sectional TEM, Mossbauer spectroscopy and X-ray rocking curve measurements have been used to study the thickness, the crystalline quality, the abruptness of the interfaces, the chemical phase, the strain and the orientation of both the surface and buried CoSi2 layers. The results show that the quality of surface and buried CoSi2 layers formed by IBS is as good as those formed by MBE.